Super Junction N-Channel MOSFETs for High-Voltage, Fast-Switching
Central Semiconductor unveils a new line of 650 V Super Junction N-Channel MOSFETs, engineered for optimal power conversion efficiency in applications involving high-voltage and high-frequency switching.
The suite of five 650 V Super Junction N-Channel MOSFETs by Central Semiconductor is tailored for power-dense conversion applications within electric vehicle (EV) charging stations, renewable energy inverters, power factor correction systems, and switch mode power supplies (SMPS).
EV charging. Image used courtesy of Adobe Stock
Central Semiconductor's high-voltage MOSFETs, available in TO-220FP packages, accommodate operational currents up to 29 A and feature low on-resistances (RDSON) down to 130 mΩ, facilitating efficient and economical high-power conversions.
Rooted in Hauppauge, New York, and operational since the 1970s, Central Semiconductor has specialized in extending the lifespan of legacy semiconductor technologies in conventional packaging. This strategic focus provides Original Equipment Manufacturers (OEMs) with the means to prolong the viability of their existing product lines, bypassing the financial burden of extensive redesigns.
EV Onboard Charging Applications
Level 1 and Level 2 EV chargers provide single or multi-phase AC power to an EV’s onboard charger (OBC). Within the EV, the OBC provides rectification and power factor correction of the input AC power, followed by an isolated DC-DC converter that generates high-voltage DC for charging the EV battery pack.
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EV charging with AC power (Levels 1 and 2). Image used courtesy of Central Semiconductor
Central Semiconductor currently offers a robust portfolio of silicon and silicon carbide (SiC) diodes, rectifier modules, and MOSFETs suitable for EV charging applications, and the new 650 V devices are an expansion to this selection.
According to Tom Donofrio, director of Marketing and Sales Operations at Central Semiconductor, the high-voltage MOSFETs will extend Central’s portfolio of fast-switching devices and pair well with the company’s HyperFast Rectifiers used in PFC circuits for EV charging and similar applications.
Central Semiconductor products for EV charging. Image used courtesy of Central Semiconductor
At $1.25 each in low volumes, the silicon MOSFETs are a good lower-cost alternative to more exotic wide bandgap solutions like SiC or gallium nitride (GaN). Still, the Super Junction MOSFETs deliver performance, supporting power-dense designs with high-speed switching capabilities (up to 1 MHz) and low on-resistances.
Driving a Silicon MOSFET
In a semiconductor, the energy needed to transition electrons from the valence to the conduction band is known as the bandgap. For FETs, this translates to the voltage (energy) required to transition the device to an ON state.
CDMSJ22029-650 drive characteristics. Image used courtesy of Central Semiconductor
Emerging SiC and GaN devices are important technologies for high-voltage, power-dense conversion circuits due to their higher switching speeds, low loss conduction, and reliability at high temperatures. However, the higher bandgaps of these compound semiconductors, as measured in electron volts (eV), can make them more difficult to operate.
Conversely,
silicon FETs with lower bandgaps are much easier to operate, allowing
for simpler gate drive circuits. The gate-source threshold voltage (VGS(th)) is the voltage required to induce a conduction channel in a FET. For the CDMSJ22029-650, this value is just 3 V.
