Toshiba Launches 1700 V Silicon Carbide MOSFET Module Tailored for Power Supply Systems
Toshiba Electronic Devices & Storage Corporation has announced the mass production of the MG250V2YMS3, a groundbreaking 3rd generation silicon carbide (SiC) 1700 V, 250 A SiC MOSFET module. This innovative product joins Toshiba's expanding portfolio of SiC solutions designed to optimize industrial equipment performance.
BonChip Electronics, a trusted distributor of the entire Toshiba product line, offers the complete range of SiC MOSFET modules, including the MG250V2YMS3. We also provide a wide selection of power electronics solutions and expert technical support. Contact us today to explore how Toshiba's SiC technology can empower your next industrial project.
Unlocking Efficiency Gains with the MG250V2YMS3:
The MG250V2YMS3 is engineered to deliver exceptional efficiency in industrial applications:
- Reduced Power Loss: The module boasts a low drain-source on-voltage (VDS(on)) of 0.8 V (typ.), significantly minimizing power loss within equipment.
- Low Switching Loss: The MG250V2YMS3 achieves low turn-on switching loss (18 mJ typ.) and low turn-off switching loss (11 mJ typ.), further enhancing overall efficiency. This translates to reduced heat generation, enabling the use of smaller cooling systems and ultimately lowering operational costs.
High-Speed Switching Capability:
The MG250V2YMS3 features a low stray inductance of 12 nH (typ.), enabling high-speed switching. This characteristic makes it ideal for high-frequency isolated DC-DC converters, commonly used in various industrial applications.
Comprehensive SiC MOSFET Module Portfolio:
Toshiba's 2-153A1A package SiC MOSFET module lineup now encompasses four products, including the new MG250V2YMS3:
- MG250YD2YMS3 (2200 V / 250 A)
- MG400V2YMS3 (1700 V / 400 A)
- MG600Q2YMS3 (1200 V / 600 A)
This expanded portfolio offers designers greater flexibility in selecting the most suitable SiC MOSFET module for their specific application requirements.
Key Features of the MG250V2YMS3:
- Low drain-source on-voltage (VDS(on)): 0.8 V (typ.) (ID=250 A, VGS=+20 V, Tch=25 °C)
- Low turn-on switching loss (Eon): 18 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
- Low turn-off switching loss (Eoff): 11 mJ (typ.) (VDD=900 V, ID=250 A, Tch=150 °C)
- Low stray inductance (LsPN): 12 nH (typ.)
Toshiba's MG250V2YMS3 SiC MOSFET module represents a significant advancement in industrial power electronics. Contact BonChip Electronics today to learn more about this innovative product and how it can elevate the performance of your next industrial design!
