Innoscience Introduces Advanced GaN HEMT Driver IC Targeted for Power Supply Solutions
Innoscience Unveils the INS1001DE: A Game-Changing GaN Driver IC for High-Performance Power Electronics
Innoscience, a leading innovator in Gallium Nitride (GaN) technology, announces the INS1001DE, a revolutionary new gate driver IC specifically designed to drive single-channel GaN HEMTs (High-Electron-Mobility Transistors) in various power converter applications.
Optimized for e-mode GaN HEMTs, Particularly InnoGaN Devices
The INS1001DE is meticulously engineered to unlock the full potential of e-mode GaN HEMTs, particularly Innoscience's own InnoGaN devices. Min Chen, VP of IC Design at Innoscience, highlights the key strengths of the INS1001DE:
- Exceptional Driving Capability: Ensures precise and efficient control of GaN HEMTs for optimal performance.
- Fast Propagation Delay: Minimizes signal latency for high-frequency switching applications.
- Robust Protection Features: Built-in UVLO (undervoltage lockout), OVP (overvoltage protection), and OTP (over-temperature protection) safeguard your circuits against potential damage.
Enhanced Flexibility and Control
The INS1001DE offers a multitude of features that provide designers with exceptional flexibility and control over their GaN-based power electronics systems:
- Dual Non-Inverting and Inverting PWM Inputs: Supports a variety of control methods, including controllers, opto-couplers, and digital isolators.
- Independent Pull-Up and Pull-Down Outputs: Grants independent control over turn-on and turn-off speeds of the GaN HEMT, enabling fine-tuned optimization of switching behavior.
- User-Programmable Driver Voltage: Tailor the driver voltage to match the specific gate requirements of different GaN HEMTs using an external resistor divider.
- Integrated 5V LDO: Provides a convenient power source for digital isolators or other circuitry in high-side driver applications.
Wide Range of Applications and Superior Performance
With its extensive feature set and robust design, the INS1001DE is ideally suited for a wide range of demanding power electronics applications, including:
- Switch-Mode Power Supplies (SMPS)
- AC/DC and DC/DC Converters (Boost, Flyback, Forward, Half-Bridge, and Full-Bridge)
- Synchronous Rectification Circuits
- Solar Inverters
- Motor Control
- Uninterruptible Power Supplies (UPS)
The INS1001DE boasts an impressive operating voltage range of 6V to 20V and powerful pull-up and pull-down resistances (1.3Ω and 0.5Ω, respectively). Additionally, it comes in a thermally enhanced DFN 3x3-10L package, ensuring efficient heat dissipation for reliable operation.
BonChip Electronics - Your Authorized Innoscience Distributor
BonChip Electronics is your trusted distributor for Innoscience products. We offer the complete line of innovative Innoscience solutions, including the groundbreaking INS1001DE GaN driver IC. With our commitment to exceptional service, fast delivery, and technical expertise, we can assist you in selecting the perfect Innoscience components to elevate your next high-performance power electronics project.
Contact BonChip Electronics today to explore how the INS1001DE can empower your next GaN-based design!
