Toshiba Introduces TRSxxx120Hx Series 1200V SiC Schottky Barrier Diodes
Toshiba Introduces TRSxxx120Hx Series 1200V SiC Schottky Barrier Diodes
BonChip Electronics, a leading distributor of Toshiba's power semiconductor solutions, is excited to announce the availability of the TRSxxx120Hx Series of 1200V SiC Schottky barrier diodes (SBDs). These high-performance devices are designed to meet the demanding requirements of industrial equipment and offer exceptional efficiency and reliability.
Key Features and Benefits
- Third-Generation SiC Technology: Utilizes Toshiba's advanced third-generation SiC technology for superior performance.
- Industry-Leading Low Forward Voltage: Offers an industry-leading low forward voltage of 1.27V (typ.), reducing power loss.
- Low Total Capacitive Charge: Features a low total capacitive charge of 109nC (typ.), minimizing switching losses.
- Low Reverse Current: Provides a low reverse current of 2.0μA (typ.), ensuring minimal leakage.
- Wide Range of Applications: Suitable for photovoltaic inverters, electric vehicle charging stations, and switching power supplies.
Ideal for High-Power Applications
The TRSxxx120Hx Series is ideal for applications requiring high power, efficiency, and reliability. They are particularly well-suited for:
- Photovoltaic Inverters: Improves the efficiency of solar power systems.
- Electric Vehicle Charging Stations: Enables faster and more efficient charging of electric vehicles.
- Switching Power Supplies: Provides high-efficiency power conversion for industrial equipment.
BonChip Electronics offers the TRSxxx120Hx Series and a wide range of Toshiba's power semiconductor solutions, providing customers with expert technical support and fast delivery.
